SI1034X-T1-GE3

SI1034X-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI1034X-T1-GE3
Manufacturer
Description
MOSFET DL N-CH 20V 180MA SC89-6
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 180mA
Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 5 Ohm @ 200mA, 4.5V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.