Attribute
Description
Manufacturer Part Number
FDB035AN06A0
Manufacturer
Description
MOSFET,
N,
SMD,
TO-263AB; Transistor Polarity:N Channel; Con...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1928
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 319.50 | ₹ 319.50 |
Stock: 339
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 422.18 | ₹ 422.18 |
| 10 | ₹ 359.71 | ₹ 3,597.10 |
| 100 | ₹ 286.82 | ₹ 28,682.00 |
| 500 | ₹ 252.74 | ₹ 1,26,370.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 124nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 6400pF @ 25V | |
| Power - Max | 310W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 3.5 mOhm @ 80A, 10V for MOSFET efficiency.
