Attribute
Description
Manufacturer Part Number
FDB8880
Manufacturer
Description
MOSFET,
N,
D2-PAK; Transistor Polarity:N Channel; Continuous...
Note :
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Stock: 946
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 91.50 | ₹ 91.50 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 130.63 | ₹ 130.63 |
| 10 | ₹ 101.29 | ₹ 1,012.90 |
| 100 | ₹ 76.49 | ₹ 7,649.00 |
| 1000 | ₹ 60.87 | ₹ 60,870.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 54A | |
| Rds On (Max) @ Id, Vgs | 11.6 mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1240pF @ 15V | |
| Power - Max | 55W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 11.6 mOhm @ 40A, 10V for MOSFET efficiency.
