Attribute
Description
Manufacturer Part Number
FQB33N10LTM
Manufacturer
Description
MOSFET N-CH 100V 33A D2PAK
Note :
GST will not be applied to orders shipping outside of India
Stock: 6266
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 89.25 | ₹ 89.25 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 118.32 | ₹ 118.32 |
| 100 | ₹ 91.16 | ₹ 9,116.00 |
| 250 | ₹ 82.35 | ₹ 20,587.50 |
| 500 | ₹ 74.40 | ₹ 37,200.00 |
| 1000 | ₹ 68.53 | ₹ 68,530.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 33A | |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 40nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 1630pF @ 25V | |
| Power - Max | 3.75W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 52 mOhm @ 16.5A, 10V for MOSFET efficiency.
